TEUS S-100

EUV LIGHT SOURCE

High duty cycle and turnkey operation (user-friendly along with automated protocol to ensure the system runs smoothly with no risk and interruption)

  • High brightness (means high thoughput) along with excellent stability
  • Absolute minimum debris
  • Extremely high uptime



APPLICATIONS TEUS S-100

  • Mask and surface inspections:​
  • Patterning Mask Inspection (PMI)
  • Areal Mask Inspection (AIMS)​
  • Mask Blank Inspection (MBI)​
  • EUV optics chain in the EUV scanner inspection
  • Material science​
  • Wafer inspection

SPECIFICATIONS TEUS S-100

MODEL TEUS S-100
MAIN SPECIFICATIONS
Laser average power 100W
Pulse repetition rate 25kHz or 70kHz (Maximum)
Solid angle of collectable EUV Power 0.05sr
Plasma size* µm ≤ 60 or ≤ 40
Conversion efficiency in-band (13,5 nm±1%) radiation 2 % @2π·sr​ or 1.6% @2π·sr​
ЕUV flux inside collection angle after debris mitigation system in-band (13.5nm±1%)​ 11 mW​ or 9 mW​
Spectral brightness after debris mitigation system in-band (13.5nm±1%), W/mm2·sr ≥ 80​W/mm2·sr​ or ≥ 140 W/mm2·sr​​
Plasma stability** 3% RMS
MODEL TEUS S-100
SYSTEM LIFETIME AND MAINTENANCE REQUIEMENTS
Collector lifetime with degradation of 10% without using a special membrane filter in 24/7 mode of operation not less than 8 months
Collector lifetime with degradation of 10% using a special membrane filter in 24/7 mode of operation not less than 18 months
Maintenance time every: 4 months - 1 day​
Uptime in 24/7 mode of operation*** 4 months​
MODEL TEUS S-100
ELECTRICAL POWER, SYSTEM DIMENSIONS AND WEIGHT
Electrical power ​ 6.5 kW
Dimensions (L×W×H) 1500×1000×1200 mm
Weight, including laser components 770 Kg
MODEL TEUS S-100
FACILITY REQUIREMENTS
Room cleanliness class ISO7​
Water flow rate 10 L/min

TECHNOLOGY

Find out more information about the technology of the EUV light sources